Publication List
1. The Temperature Dependence of Electronic Density of States and DC Electrical Receptivity in Disordered Binary Alloys, Phys. Rev. B5, 2897 (1972), A.-B Chen, G. Weisz and A. Sher.
2. Electronic Structure of Disordered Alloys - Iteration Schemes Converging to The Coherent-Potential Approximation, Phys. Rev. B7, 2230 (1973), A.-B. Chen.
3. Improved Parametrization Scheme for Electronic Energy Bands, Phys. Rev. B9, 3207 (1974), A.-B. Chen, B. Segall, B. Cooper and E. Kreiger.
4. Parametrization of Electronic Band Structure Using The Green's Function Method: empirical application to Cu and Ag, Phys. Rev. B12, 600 (1975), A.-B. Chen and B. Segall.
5. Phtoelectronic Energy Distribution Associated with Interconduction Band Transitions in Cu, Ag and Au, Solid State Comm. 17, 1557 (1975), B. Segall and A.-B. Chen.
6. Piezooptical Response Associated with The Interconduction Band Transitions in Noble Metals, Solid State Comm. 18, 149 (1976), A.-B. Chen and B. Segall.
7. Calculation of Momentum Matrix Elements Using The KKR Method, Phys. Rev. B14, 2384 (1976), A.-B. Chen.
8. On The Adiabatic Approximation in Strong-Scattering Alloys, Phys. Rev. B15, 3681 (1977), A.-B. Chen and A. Sher.
9. Sensitivity of Electronic Band Structure to Changes in Phase Shifts, Phys. Rev. B15, 5488 (1977), A.-B. Chen and B. Segall.
10. On the Singularities of the Green's Function Method for The Electronic Structure of Solid, Phys. Rev. B16, 2556 (1977), B. Segall and A.-B. Chen.
11. Simple Brillouin-Zone Scheme for The Spectral Properties of Solids, Phys. Rev. B16, 3291 (1977), A.-B. Chen.
12. Empirical Parametrization of Electronic Structure, in Transition Metals 1977 (Inst. Phys. Conf. Ser. 39), 25 (1978), A.-B. Chen and A. Sher.
13. Gap Variation in Semiconductor Alloys and The Coherent Potential Approximation, Phys. Rev. Lett. 40, 900 (1978), A.-B. Chen and A. Sher.
14. Valence-Band Structures of III-V Compounds and Alloys - Bond-Orbital and Coherent-Potential Approximations, Phys. Rev. B 17, 4726 (1978), A.-B. Chen ns A. Sher.
15. Deformation Potentials for Isotropic Strains, Phys. Rev. B18, 5326 (1978), B. Segall, N. Elyashar and A.-B. Chen.
16. Method for Calculating Charge Densities in Impurities and Disordered Alloys, Phys. Rev. B18, 6450 (1978), A.-B. Chen and A. T. Fromhold, Jr.
17. Hopon Mechanism for Ion Transport in Ionic Compounds, Phys. Status Solidi (b) 90, K21 (1978), A. T. Fromhold Jr. and A.-B. Chen.
18. Coherent-Potential-Approximation Calculation of The Valence Bands of Quaternary Alloy In(x)Ga(1-x)As(y)P(1-y), Phys. Rev. B19, 3957 (1979), A.-B. Chen and A. Sher.
19. The Electronic Structure of III-V Semiconductors and Alloys Using Simple Orbitals, Phys. Rev. B22, 3886 (1980), A.-B. Chen and A. Sher.
20. Two Photon Ionization of Potassium Atom, J. Phys. B14, 209 (1981), M. Pindzola, A.-B. Chen and B. Ritchie.
21. Electronic Structure of Pseudo-Binary Semiconductor Alloys Al(x)Ga(1-x) As, GaP(x)As(1-x) and Ga(x)In(1-x)P, Phys. Rev. B23, 5360 (1981), A.-B. Chen and A. Sher.
22. Calculation of The Electronic Properties of Pseudo-Binary Semiconductor Alloys, Phys. Rev. B23, 5645 (1981), A.-B. Chen and A. Sher.
23. CPA Calculation for (Hg,Cd)Te, J.of Vac. Sci.& Techno. 21 (1), 138 (1982), A.-B. Chen and A. Sher.
24. Construction of Orthonormal Local Orbitals and Application to Zinc-Blende Semiconductors, Phys. Rev. B26, 6603 (1982), A.-B. Chen and A. Sher.
25. Dominance of Atomic States in A Solid: Selective Breakdown of The Virtual Crystal Approximation in A Semiconductor Alloy - (Hg,Cd)Te, Phys. Rev. Lett. 47, 948 (1982), W. E. Spicer, J. A. Silberman, P. Morgan, I. Lindau, J. A. Wilson, A.-B. Chen and A. Sher.
26. Semiconductor Alloys, SRI Publ. "Microscience", 179 (1982), A.-B. Chen and A. Sher.
27. Universal Behavior of Hg(1-x)Cd(x)Te and Its Explanations, Physica 117B, 60 (1983), W. E. Spicer, J. A. Silberman, P. Morgan, I. Lindau, J.A. Wilson, A.-B. Chen and A. Sher.
28. Calculation of Optical Properties of Semiconductors with The Use of Simple Orbitals, Phys. Rev. B.28, 1121 (1983), A.-B. Chen, S. Phokachaipatana and A. Sher.
29. Relation Between The Electronic States and Structural Properties of Hg(1-x)Cd(x)Te, J. of Vac. Sci. & Techno. A1(3), 1674 (1983), A.-B. Chen, A. Sher and W. E. Spicer.
30. Band Gap Variations and Lattice, Surface and Interface Instability in Hg(1-x)Cd(x)Te and Related Compounds, J. Vac. Sci. & Techno. A1(3), 1735 (1983), W. E. Spicer, J. A. Silberman, I. Lindau, J. A. Wilson, A.-B. Chen and A. Sher.
31. On the Determination of The Energy Band Offsets in Hg(1-x)Cd(x)Te Junctions, J. Vac. Sci. & Techno. A1(3), 1692 (1983), T. N. Casselman, A. Sher, W. E. Spicer and A.-B. Chen.
32. Bonding Theory of Semiconductor Alloys, SRI Plub., Microelectronics - Applications, Materials and Technology, Vol. 3, 1 (1984), A.-B. Chen and A. Sher.
33. Effects Influencing The Structural Integrity of Semiconductors and Their Alloys, J. of Vac. Sci. & Techno., A3(1), 105 (1985), A. Sher, A.-B. Chen, W. E. Spicer and C.-K. Shih.
34. Dislocation Energies and Hardness of Semiconductors, Appl. Phys. Lett. 46, 54 (1985), A. Sher and A.-B. Chen.
35. Phenomena Influencing The Dislocation Density of Semiconductors and Alloys, Proc. 13th International Conference on Defects in Semiconductors, edited by Kimberling and Parsey, Jr. , 335 (1985), A. Sher, A.-B. Chen and W. E. Spicer.
36. Semiconductor Alloys: Local Bond Lengths, Mixing Enthalpies and Microsclusters, in "Microscopic Identification of Electronic Defects in Semiconductors", MRS Proc., Vol. 46, 137 (1985), A.-B. Chen and A. Sher.
37. Sensitivity of Defect Energy Levels to Host Band Structures and Impurity Potentials in CdTe, Phys. Rev. B31, 6490 (1985), A.-B. Chen and A. Sher.
38. Binding Energy and Spectral Width of Si 2p Core Excitons in Si(x)Ge(1-x) Alloys, Phys. Rev. Lett. 55, 320 (1985), S. Krishnamurthy, A. Sher and A.-B. Chen.
39. Generalized Brooks' Formula and Electronic Mobility in Si(x)Ge(1-x) alloys, Appl. Phys. Lett. 47, 160 (1985), S. Krishnamurthy, A. Sher and A.-B. Chen.
40. Semiconductor Pseudo-Binary Alloys: Bond Length Relaxations and Mixing Enthalpies, Phys. Rev. B32, 3695 (1985), A.-B. Chen and A. Sher.
41. Band Structure of Si(x)Ge(1-x) Alloys, Phys. Rev. B33, 1026 (1986), S. Krishnamurthy, A. Sher and A.-B. Chen.
42. Correlations in Pseudo-Binary Alloys, J. of Vac. Sci. & Techno. A4(4), 1965 (1986), A. Sher, A.-B. Chen and M. van Schilfgaarde.
43. Coulomb Energy in Pseudo-Binary Alloys, Phys. Rev. Lett. 57, 1149 (1986), M. van Schilfgaarde, A.-B. Chen and A. Sher.
44. Velocity-Field Characteristics of III-V Semiconductor Alloys, J. of Appl. Phys. 61, 1475 (1987), S. Krishnamurthy, A. Sher and A.-B. Chen.
45. Vacancy Formation Energies in II-VI Semiconductors, J. of Vac. Sci. & Techno. A5(5), 3009 (1987), M. A. Berding, A. Sher and A.-B. Chen.
46. Electronic and Transport Properties of HgCdTe and HgZnTe, J. of Vac. Sci. Tech. A5(5), 3014 (1987), M. A. Berding, A. Sher, S. Krishnamurthy and A.-B. Chen.
47. Alloy Electronic Structure and Statistics, in Ternary and Multinary Compounds, MRS Proc. of 7th International Conference, 377 (1987), A.-B. Chen, M. van Schilfgaarde, S. Krishnamurthy, M. A. Marcy and A. Sher.
48. Configuration Dependence of Coulomb Interactions in Pseudobinary Alloys, in Ternary and Multinary Compounds, MRS Proc. of 7th International Conference, 411 (1987), M. van Schilfgaarde, A.-B. Chen and A. Sher.
49. Structural-Property Relationships in Semiconductor Alloys, Mat. Res. Soc. Symp. Proc. Vol. 90, 91 (1987), A. Sher, M. A. Berding, M. van Schilfgaarde, A.-B. Chen and W. Chen.
50. Semiconductor Alloys: Structural Property Engineering, Proc. 1st Int. SAMPE Electronic Conf., 323, (1987), A. Sher, A.-B. Chen, M. van Schilfgaarde and M. A. Berding.
51. HgCdTe Versus HgZnTe: Electronic Properties and Vacancy Formation Energies, Mat. Res. Sco. Symp. Proc. Vol. 90, 127 (1987), M. A. Berding, A. Sher and A.-B. Chen.
52. Quasi-chemical Approximation in Binary Alloys, Phys. Rev. B36, 4279 (1987), A. Sher, M. van Schilfgaarde, A.-B. Chen and W. Chen.
53. Polarity in Semiconductor Compounds, Phys. Rev. B36, 7433 (1987), M. A. Berding, A. Sher and A.-B. Chen.
54. Phase Diagram and Local Correlations in Pseudobinary Alloys, Phys. Rev. B36, 6585 (1987), R. Patrick, A.-B. Chen and A. Sher.
55. Semiconductor Alloys for High-Speed Electronics, Proc. Ist International SAMPE Electronics Conference, Sunnyvale, CA, P. 318 (1987), S. Krishnamurthy, A. Sher and A.-B. Chen,
56. Fracture and Hardness of Semiconductor Alloys, SRI-BIP Datalog, D87-1189 (Oct., 1987), A. Sher, M. van Schilfgaarde, A.-B. Chen and M. A. Berding.
57. Structural Properties of Bi-bearing Semiconductor Alloys, J. of Appl. Phys. 63, 107 (1988), M. A. Berding, A. Sher, A.-B. Chen and W. Miller.
58. Modeling of Mechanical Properties of II-VI Materials, J. of Crystal Growth 86, 15 (1988), A. Sher, M. A. Berding, M. van Schilfgaarde, A.-B. Chen and R. Patrick.
59. Systematics of Chemical and Structural Disorder on The Band Edge Properties of Semiconductor Alloys, Phys. Rev. B37, 4254 (1988), S. Krishnamurthy, M. A. Berding, A. Sher and A.-B. Chen.
60. Ballistic Transport in II-VI Compounds and Alloys, J. of Crystal Growth 86, 33 (1988), M. A. Berding, S. Krishnamurthy, A. Sher and A.-B. Chen.
61. Material Choice for Ballistic Transport: Group Velocity and Mean Free Path Calculated from Realistic Band Structures, Appl. Phys. Lett. 52 (6), 468 (1988), S. Krishnamurthy, A. Sher and A.-B. Chen.
62. Ballistic Transport in Semiconductor Alloys, J. of Appl. Phys. 63, 4546 (1988), S. Krishnamurty, A. Sher and A.-B. Chen.
63. Semiconductor Alloy Theory: Internal Strain Energy and Bulk Modulus, Phys. Rev. B. 37, 6285 (1988), A.-B. Chen, M.A. Berding and A. Sher.
64. Phase Diagrams and Local Correlation in (Hg,Cd)Te, (Hg,Zn)Te and (Cd,Zn)Te Alloys, J. of Vac. Sci. & Technol. A6, No.4, 2643 (1988), R. Patrick, A.-B Chen, A. Sher, and M. A. Berding.
65. Semiconductor Alloys for Fast Thermal Sensors, J. Appl. Phys. 64(3), 1530 (1988), S. Krishnamurthy, A. Sher, M. Madou and A.-B. Chen.
66. Deformation Potential and Intervalley Scattering: Hot-Electron Transistor Analysis, Appl. Phys. Lett. 53 (19), 1853 (1988), S. Krishnamurthy, A. Sher and A.-B. Chen.
67. Difference-Equation Approach to The Electronic Structures of Surfaces, Interfaces, and Superlattices, Phys. Rev. B39, 923 (1989), A.-B. Chen, Y.-M. Lai-Hsu and W. Chen.
68. Surface Segregation in Pseudobinary Alloys, Phys. Rev B 5980 (1989), R.S. Patrick, A.-B. Chen, A. Sher and M.A. Berding.
69. High-Field Transport in Semiconductors Based on Eigenvalue Solution to Boltzmann Equation, Appl. Phys. Lett. 55(10), 1002 (1989), S. Krishnamurthy, A. Sher and A.-B. Chen.
70. Electronic Structures of HgTe and CdTe Surfaces and HgTe/CdTe Interfaces, Phys. Rev. B40, 7825 (1989), J.T. Schick, M. Bose and A.-B. Chen.
71. Correlations and Alloy Properties: Growth, Vacancies, Surface Segregation, J. Cryst. Growth, P8, 27 (1989), A. Sher, M. A. Berding and A.-B. Chen.
72. Transport in Submicron Devices, in Microelectronic Engineering, Vol. 9, 337, (North-Holland), (1989), A. Sher, M. A. Berding and A.-B. Chen.
73. Vacancies and Surface Segregation in HgCdTe and HgZnTe, Semcon. Sci. Technol. 5, S 86 (1990), M. A. Berding, S. Sher and A.-B. Chen.
74. On Passivation of Hg(1-x)Cd(x)Te and Hg(1-x)Zn(x)Te, Proc. IRIS Materials, 257 (1990), A. Sher, M. A. Berding and A.-B. Chen.
75. Surface Roughness Theory and Low-Temperature Epitaxy, Mat. Res. Symp Proc. 161, 291 (1990), S. Krisnamurthy, M. A. Berding, A. Sher and A.-B. Chen.
76. Band Structures of HgCdTe and HgZnTe Alloys and Superlattices, Semicond. Sci. Technol. 5, S 100 (1990), A.-B. Chen, Y.-M Lai-Hsu, S. Krishnamurthy, M.A. Berding and A. Sher.
77. Cleavage Energies in Semiconductors, J. Appl. Phys. 67(10), 6175 (1990), M.A. Berding, S. Krishnamurthy, A. Sher and A.-B. Chen.
78. Semiconductor Surface Sublimation Energies and Atom-Atom Interactions, Phys. Rev. Lett. 64, 2531 (1990), S. Krishnamurthy, M.A. Berding, A. Sher and A.-B. Chen.
79. Full-Potential Koringa-Kohn-Rostoker Band Theory Applied to Mathieu Potential, Phys. Rev. B 42, 10976 (1990), C.-Y. Yeh, A.-B. Chen, D. M. Nicholson and W.H. Butler.
80. Vacancy Formation and Extraction Energies in Semiconductor Compounds and Alloys, J. of Appl. Phys. 68(10), 5064 (1990), M.A. Berding, A. Sher and A.-B. Chen.
81. Energetics of Molecular-Beam Epitaxy Models, J. Appl. Phys. 68(8), 4020 (1990), S. Krishnamurthy, M.A. Berding, A. Sher and A.-B. Chen.
82. Formation Energies, Bond lengths, and Bulk Moduli of Ordered Semiconductor Alloys from Tight-Binding Calculations, Phys. Rev. B43, 9138 (1991), C.-Y. Yeh, A.-B. Chen, and A. Sher.
83. Hg(1-x)Cd(x)Te: Defect Structure Overview, Mat. Res. Symp. Proc. Vol. 216, 3 (1991), M.A. Berding, A. Sher and A.-B. Chen.
84. Surface Energies and Order-State: Effects on Semiconductor Growth, in "Computer Aided Innovation of New Materials", ed. M. Doyama, T. Suzuki, J. Kihara, and R. Yammamota (Eisevier Science Pub., North-Holland, 1991), 681, S. Krishnamurthy, M.A. Berding, A. Sher, and A.-B. Chen.
85. HgCdTe status Review with Emphasis on Correlations, Native Defects, and Diffusion, Semicond. Sci. Technol. 6 (1991), A. Sher, M.A. Berding, M. van Schilfgaarde, and A.-B. Chen.
86. Epitaxially Grown Semiconductor Surfaces, J. Cryst. Growth, 109, 88 (1991), S. Krishnamurthy, M. A. Berding, A. Sher and A.-B. Chen.
87. Elastic Constants and Related Properties of Semiconductor Compound and Alloys, a review article, Chap.1 in Mechanical Properties of Semiconductors (Academic Press, 1992), A.-B. Chen, A. Sher and W.T. Yost.
88. Electronic Band Structures of SiC Calculated from A Hybrid Pseudopotential and Tight-Binding Model, in "Amorphous and Crystalline Silicon Carbide IV", edited by Yang, Rahman and Harris, P. 170, (Spring-Verlag, 1992), P. Srichaikul, A.-B. Chen and J. Choyke.
89. InTlSb: An Infrared Detector Material? Appl. Phys. Lett. 62(16), 1857 (1993), M. van Schilfgaarde, A. Sher and A-B. Chen.
90. Comparison of In(1-x)Tl(x)Sb and Hg(1-x)Cd(x)Te as Long-Wavelenth Infrared Material, J. of Electronic Materials 22, No. 8, 843 (1993), A.-B. Chen, M. van Schilfgaarde, and A. Sher
91. Bound States for Anisotropic Potentials and Masses, Phys. Rev. B48, 8541 (1993), R. Pfeiffer, Y.-J. Huang, and A.-B. Chen.
92. InTlP -- A Proposed Infrared Detector Material, Appl. Phys. Lett. 53, 1853 (1994), M. van Schilfgaarde, A.-B. Chen, S. Krishnamurthy, and A. Sher.
93. Theoretical Evaluation of InTlP, InTlAs, and InTlSb As Long-Wave Infrared Detectors, A. Sher, M. Van Schilfgaarde, S. Krishnamurthy, M.A. Berding, and A.-B. Chen, J. Electronic Materials, 24, 1119 (1995).
94. Temperature Dependence of Band Gaps in HgCdTe and Other Semiconductors, S. Krishnamurthy, A.-B. Chen M. van Schilfgaarde, and A. Sher, J. Electrinic Materials, 24, 1121 (1995).
95. Nitrogen Donor Levels and Conduction Band Edge Structures in 3C, 2H, 4H, and 6H SiC, A.-B. Chen in "Silicon Carbide and Related Materials" (Institute of Physics Conf. Ser. No. 142), P.285 (1995)
96. Semiconductor Alloys: physics and materials engineering, (Plenum Pub. Co, 1995), A.-B. Chen and A. Sher.
97. Ground State and Conformation Excitations of Finite Polyacetylene Chains, R.S. Pfeiffer, G. Yoder, and A,-B. Chen, (accepted for PUb. in Rev. B15, 1996)
98. Comparison of HgTe Materials Grown in (100),(110), (111), and (211) Orientations, S. Krishnamurthy, A.-B. Chen, and A. Sher, J. Electronic Materials, Vol 25, 1254 (1996).
99. Full band-structure theory of resonance tunneling devices in IEEE, ICSE'96, A.-B. Chen, S. Krishnamurthy, and A. Sher,
100. COMPOUND AND INFRARED DEVICES INCLUDING IN1-XTLXQ
WHERE Q IS
AS1-Y AND 1³ X³ 0, United
States Patent # 5,483,088, Jan. 9, 1996, An-Ban Chen, Arden Sher and Mark van
Schilfgaarde
101. Near Band Edge Absorption Spectra of Narrow-Gap III-V Semiconductor Alloys, J. Appl. Phys. (1997), S. Krishnamurthy, A.-B. Chen, and A. Sher.
102. Shallow donor levels and the conduction band edge structure in polytypes of SiC, Phys. Stat. Solidi (b) 201, 81 (1997), A.-B. Chen and P. Schrichaikul.
103. Theory of AlN, GaN, InN and their alloys, J. Cryst. Growth 178, 8-31 (1997), M. Van Schilfgaarde, A. Sher, and A.-B. Chen.
104. Band Structure effects on the high field transport in GaN and GaInN, Appl. Phys. Lett.
14, 1999 (1997), S. Krishnamurthy, M. van Schilfgaarde, A. Sher, and A.-B. Chen.
105. Accurate calculation of Auger Rates in Infrared Materials, accepted for Pub. in J. of Appl. Phys. (1997), ), S. Krishnamurthy, A. Sher, and A.-B. Chen.
106. Minority carrier lifetimes in infrared materials, accepted for Pub. in Electronic Materials (1998), S. Krishnamurthy, A. Sher, and A.-B. Chen.